AlN : TbF3 electroluminescence thin film prepared by radio-frequency magnetron sputtering

	AlN : TbF3 electroluminescence thin film prepared by radio-frequency magnetron sputtering
其他题名	论文其他题名
	Zhao Y. L.; Zhong G. Z.; Fan X. W.; Li C. H.
	1999
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	16 期号:11 页码:841-843
摘要	High quality AIN thin films doped with TbF3 were prepared by rf magnetron reaction sputtering. High purity Al metal and TbF3 were used as target materials with N-2 and Ar as sputtering gases. The influence of preparation conditions on the photoluminescence brightness was studied, and the electroluminescence was found to have a similar dependence on the concentration of TbF3 and substrate temperature. The characteristic emission of Tb3+ ions was obtained in an AlN:TbF3 alternating current thin film electroluminescence device prepared with 600 degrees C substrate temperature and 4.0 mol% concentration of TbF3.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25319
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao Y. L.,Zhong G. Z.,Fan X. W.,et al. AlN : TbF3 electroluminescence thin film prepared by radio-frequency magnetron sputtering[J]. Chinese Physics Letters,1999,16(11):841-843.
APA	Zhao Y. L.,Zhong G. Z.,Fan X. W.,&Li C. H..(1999).AlN : TbF3 electroluminescence thin film prepared by radio-frequency magnetron sputtering.Chinese Physics Letters,16(11),841-843.
MLA	Zhao Y. L.,et al."AlN : TbF3 electroluminescence thin film prepared by radio-frequency magnetron sputtering".Chinese Physics Letters 16.11(1999):841-843.

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