Numerical analysis of the detectivity in n(+)-n-p and p(+)-p-n GaInAsSb infrared detectors

	Numerical analysis of the detectivity in n(+)-n-p and p(+)-p-n GaInAsSb infrared detectors
其他题名	论文其他题名
	Tian Y.; Zhang B. L.; Zhou T. M.; Jiang H.; Jin Y. X.
	1999
发表期刊	Solid-State Electronics
ISSN	0038-1101
卷号	43 期号:10 页码:1879-1891
摘要	In this paper, the detectivity for n(+)-n-p and p(+)-p-n GaInAsSb infrared detectors in both the front- and backside illuminated cases are calculated and analyzed, respectively. The influence of the carrier concentration and width in each layer, as well as the surface recombination velocities at different surfaces of the detectors are considered. It is indicated that high R(0)A dose not guarantee the high detectivity because the quantum efficiency combines with the R(0)A to determine the behavior of D. On the base of the calculations, it is observed that the different material parameters are required for the optimum D in the different structures with the different directions of the light injected. (C) 1999 Elsevier Science Ltd. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25315
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tian Y.,Zhang B. L.,Zhou T. M.,et al. Numerical analysis of the detectivity in n(+)-n-p and p(+)-p-n GaInAsSb infrared detectors[J]. Solid-State Electronics,1999,43(10):1879-1891.
APA	Tian Y.,Zhang B. L.,Zhou T. M.,Jiang H.,&Jin Y. X..(1999).Numerical analysis of the detectivity in n(+)-n-p and p(+)-p-n GaInAsSb infrared detectors.Solid-State Electronics,43(10),1879-1891.
MLA	Tian Y.,et al."Numerical analysis of the detectivity in n(+)-n-p and p(+)-p-n GaInAsSb infrared detectors".Solid-State Electronics 43.10(1999):1879-1891.

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