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The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors
其他题名论文其他题名
Tian Y.; Zhang B. L.; Zhou T. M.; Jiang H.; Jin J. X.
1999
发表期刊Physica Status Solidi a-Applied Research
ISSN0031-8965
卷号174期号:2页码:413-430
摘要In this paper, the performance is analyzed for the P-1-p(2)-n and N-1-n(2)-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors operated at 300 K, based on the incident wavelength and the parameters of GaSb and Ga0.8In0.2As0.19Sb0.81 The analyzed results show that the detectivity is much higher with the light incident first through the p-type than first through the n-type Ga0.8In0.2As0.19Sb0.81 for both structures. In addition, the carrier concentration of GaSb should be as low as possible to reduce the tunneling noise through the P-1-p(2) and N-1-n(2) heterojunctions. With the same condition for the two structures, the N-1-n(2)-p structure is more advantage than the P-1-p(2)-n structure because the high P-1-p(2) heterojunction recombination velocity increases the Auger and radiative noise mechanisms, which limit the performance of photodetectors.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25314
专题中科院长春光机所知识产出
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Tian Y.,Zhang B. L.,Zhou T. M.,et al. The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors[J]. Physica Status Solidi a-Applied Research,1999,174(2):413-430.
APA Tian Y.,Zhang B. L.,Zhou T. M.,Jiang H.,&Jin J. X..(1999).The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors.Physica Status Solidi a-Applied Research,174(2),413-430.
MLA Tian Y.,et al."The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors".Physica Status Solidi a-Applied Research 174.2(1999):413-430.
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