Temperature-dependent exciton recombination in asymmetrical ZnCdSe ZnSe double quantum wells

	Temperature-dependent exciton recombination in asymmetrical ZnCdSe ZnSe double quantum wells
其他题名	论文其他题名
	Yu G. Y.; Fan X. W.; Zhang J. Y.; Zheng Z. H.; Yang B. J.; Zhao X. W.; Shen D. Z.; Kong X. G.
	1999
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	32 期号:13 页码:1506-1510
摘要	Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells is studied by recording photoluminescence spectra and photoluminescence decay spectra. The exciton tunnelling from the wide well to the narrow well and the thermal dissociation of excitons are two factors that influence the exciton recombination in this structure. In the narrow well, both of the two processes decrease the emission intensity, whereas, in the wide well, these two processes have contrary influences on the exciton density. The change of the emission intensity depends on which is the stronger one.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25303
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu G. Y.,Fan X. W.,Zhang J. Y.,et al. Temperature-dependent exciton recombination in asymmetrical ZnCdSe ZnSe double quantum wells[J]. Journal of Physics D-Applied Physics,1999,32(13):1506-1510.
APA	Yu G. Y..,Fan X. W..,Zhang J. Y..,Zheng Z. H..,Yang B. J..,...&Kong X. G..(1999).Temperature-dependent exciton recombination in asymmetrical ZnCdSe ZnSe double quantum wells.Journal of Physics D-Applied Physics,32(13),1506-1510.
MLA	Yu G. Y.,et al."Temperature-dependent exciton recombination in asymmetrical ZnCdSe ZnSe double quantum wells".Journal of Physics D-Applied Physics 32.13(1999):1506-1510.

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