The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD)

	The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD)
其他题名	论文其他题名
	Yu G. Y.; Fan X. W.; Zhang J. Y.; Yang B. J.; Zhao X. W.; Shen D. Z.; Lu Y. M.
	1999
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	196 期号:1 页码:77-82
摘要	ZnSe epitaxy layers were grown on (1 0 0)GaAs substrates by photo-assisted MOCVD using DMZn and DMSe as group II and VI sources, respectively. Irradiation can improve the growth rate efficiently, but the irradiation intensity influences the growth rate and the crystalline quality negligibly in a large range. Due to an oxidation reaction on the surface of ZnSe, the growth rate and the flow ratio of group II and VI sources influence the crystalline quality. (C) 1999 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25294
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu G. Y.,Fan X. W.,Zhang J. Y.,et al. The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD)[J]. Journal of Crystal Growth,1999,196(1):77-82.
APA	Yu G. Y..,Fan X. W..,Zhang J. Y..,Yang B. J..,Zhao X. W..,...&Lu Y. M..(1999).The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD).Journal of Crystal Growth,196(1),77-82.
MLA	Yu G. Y.,et al."The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD)".Journal of Crystal Growth 196.1(1999):77-82.

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