1.3-mu m emission of Nd : LaF3 thin films grown by molecular beam epitaxy

	1.3-mu m emission of Nd : LaF3 thin films grown by molecular beam epitaxy
其他题名	论文其他题名
	Zhang X.; Lahoz F.; Serrano C.; Lacoste G.; Daran E.
	2000
发表期刊	Ieee Journal of Quantum Electronics
ISSN	0018-9197
卷号	36 期号:2 页码:243-247
摘要	The 1.3-mu m emission of Nd3+-doped LaF3 thin films grown on LaF3 acid CaF2 (111) substrates by molecular beam epitaxy is reported. The waveguide behavior of the heteroepitaxial layers has been demonstrated and the refractive indexes measured. Guided spectra have been obtained from these layers using a prism-coupling technique. The 1.3-mu m emission corresponding to the F-4(3/2)-->I-4(3/2) transition has been characterized as a function of Nd3+ concentration and temperature. The relative efficiencies of different excitation bands were compared. The optimum concentration for Nd3+ dopant has been found to be about 1 at.%, A narrowing of the emission lines is observed in the homoepitaxial layers compared to the heteroepitaxial layers, The decay of the luminescence of the F-4(3/2) level measured at room temperature is similar for homoepitaxial and heteroepitaxial layers.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25267
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang X.,Lahoz F.,Serrano C.,et al. 1.3-mu m emission of Nd : LaF3 thin films grown by molecular beam epitaxy[J]. Ieee Journal of Quantum Electronics,2000,36(2):243-247.
APA	Zhang X.,Lahoz F.,Serrano C.,Lacoste G.,&Daran E..(2000).1.3-mu m emission of Nd : LaF3 thin films grown by molecular beam epitaxy.Ieee Journal of Quantum Electronics,36(2),243-247.
MLA	Zhang X.,et al."1.3-mu m emission of Nd : LaF3 thin films grown by molecular beam epitaxy".Ieee Journal of Quantum Electronics 36.2(2000):243-247.

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