Changchun Institute of Optics,Fine Mechanics and Physics,CAS
The formation process of self-assembled CdSe quantum dots below critical thickness | |
其他题名 | 论文其他题名 |
Yang Y.; Shen D. Z.; Zhang J. Y.; Fan X. W.; Zhen Z. H.; Zhao X. W.; Zhao D. X.; Liu Y. N. | |
2000 | |
发表期刊 | Journal of Crystal Growth |
ISSN | 0022-0248 |
卷号 | 220期号:3页码:286-290 |
摘要 | The formation process of CdSe self-assembled quantum dots (SAQDs) below the critical thickness was observed by atomic force microscopy (AFM) for the first time. Two monolayers (MLs) of CdSe coverage were grown directly on GaAs (1 0 0) surfaces by metalorganic chemical vapor deposition (MOCVD). AFM images were taken constantly of the same area of 1 mum(2) within several hours after the growth. It revealed that the formation of CdSe SAQDs under critical thickness was due to the effect of surface diffusion and strain release. Our results make it possible to directly observe the process of release strain and to obtain the actual information on the formation process of self-assembled quantum dots. (C) 2000 Elsevier Science B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25264 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Yang Y.,Shen D. Z.,Zhang J. Y.,et al. The formation process of self-assembled CdSe quantum dots below critical thickness[J]. Journal of Crystal Growth,2000,220(3):286-290. |
APA | Yang Y..,Shen D. Z..,Zhang J. Y..,Fan X. W..,Zhen Z. H..,...&Liu Y. N..(2000).The formation process of self-assembled CdSe quantum dots below critical thickness.Journal of Crystal Growth,220(3),286-290. |
MLA | Yang Y.,et al."The formation process of self-assembled CdSe quantum dots below critical thickness".Journal of Crystal Growth 220.3(2000):286-290. |
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