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The formation process of self-assembled CdSe quantum dots below critical thickness
其他题名论文其他题名
Yang Y.; Shen D. Z.; Zhang J. Y.; Fan X. W.; Zhen Z. H.; Zhao X. W.; Zhao D. X.; Liu Y. N.
2000
发表期刊Journal of Crystal Growth
ISSN0022-0248
卷号220期号:3页码:286-290
摘要The formation process of CdSe self-assembled quantum dots (SAQDs) below the critical thickness was observed by atomic force microscopy (AFM) for the first time. Two monolayers (MLs) of CdSe coverage were grown directly on GaAs (1 0 0) surfaces by metalorganic chemical vapor deposition (MOCVD). AFM images were taken constantly of the same area of 1 mum(2) within several hours after the growth. It revealed that the formation of CdSe SAQDs under critical thickness was due to the effect of surface diffusion and strain release. Our results make it possible to directly observe the process of release strain and to obtain the actual information on the formation process of self-assembled quantum dots. (C) 2000 Elsevier Science B.V. All rights reserved.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25264
专题中科院长春光机所知识产出
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Yang Y.,Shen D. Z.,Zhang J. Y.,et al. The formation process of self-assembled CdSe quantum dots below critical thickness[J]. Journal of Crystal Growth,2000,220(3):286-290.
APA Yang Y..,Shen D. Z..,Zhang J. Y..,Fan X. W..,Zhen Z. H..,...&Liu Y. N..(2000).The formation process of self-assembled CdSe quantum dots below critical thickness.Journal of Crystal Growth,220(3),286-290.
MLA Yang Y.,et al."The formation process of self-assembled CdSe quantum dots below critical thickness".Journal of Crystal Growth 220.3(2000):286-290.
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