Photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method

	Photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method
其他题名	论文其他题名
	Zhao D. X.; Liu Y. C.; Shen D. Z.; Lu Y. M.; Zhang J. Y.; Fan X. W.
	2001
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	90 期号:11 页码:5561-5563
摘要	The photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material. (C) 2001 American Institute of Physics.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25224
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao D. X.,Liu Y. C.,Shen D. Z.,et al. Photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method[J]. Journal of Applied Physics,2001,90(11):5561-5563.
APA	Zhao D. X.,Liu Y. C.,Shen D. Z.,Lu Y. M.,Zhang J. Y.,&Fan X. W..(2001).Photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method.Journal of Applied Physics,90(11),5561-5563.
MLA	Zhao D. X.,et al."Photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method".Journal of Applied Physics 90.11(2001):5561-5563.

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