Influence of Ag concentration and post-deposition annealing on Gd3Ga5O12/Ag thin film electroluminescence

	Influence of Ag concentration and post-deposition annealing on Gd3Ga5O12/Ag thin film electroluminescence
其他题名	论文其他题名
	Xu X. L.; Xu Z.; Hou Y. B.; Wang Y. S.; Xu X. R.
	2001
发表期刊	Displays
ISSN	0141-9382
卷号	22 期号:3 页码:97-100
摘要	We have investigated the dependence on various Ag concentration for photoluminescence (PL) and electroluminescence (EL) of Gd3Ga5O12/Ag thin film, respectively. A rapid quenching of PL is observed above 0.2 at.% of Ag concentration due to lattice defects and impurity atoms. However, the optimal concentration of Ag in the EL efficiency is about 1 at.%. This may be attributed to excited state electrons that are not easily trapped by annihilation centers in EL and a 'narrower' forbidden band. The lattice absorption edge is red shifted with increasing Ag concentration. Post-deposition annealing has greatly reduced the lattice imperfections, and improved the PL and EL intensity. The best luminance of the EL devices annealed at 450 degreesC is about 20 cd/m(2) when driven at 5000 Hz. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25220
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xu X. L.,Xu Z.,Hou Y. B.,et al. Influence of Ag concentration and post-deposition annealing on Gd3Ga5O12/Ag thin film electroluminescence[J]. Displays,2001,22(3):97-100.
APA	Xu X. L.,Xu Z.,Hou Y. B.,Wang Y. S.,&Xu X. R..(2001).Influence of Ag concentration and post-deposition annealing on Gd3Ga5O12/Ag thin film electroluminescence.Displays,22(3),97-100.
MLA	Xu X. L.,et al."Influence of Ag concentration and post-deposition annealing on Gd3Ga5O12/Ag thin film electroluminescence".Displays 22.3(2001):97-100.

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