Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer

	Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer
其他题名	论文其他题名
	Wang X. Q.; Dua G. T.; Yin J. Z.; Li M.; Li M. T.; Qu Y.; Bo B. X.; Yang S. R.
	2002
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	234 期号:2—3 页码:379-383
摘要	In this paper, InAs self-organized quantum dots (QDs) were deposited on (0 0 1) InP substrate with and without a GaAs interlayer by low pressure metalorganic chemical vapor deposition (LP-MOCVD). An atomic force microscope (AFM) image showed that InAs QDs arranged regularly on the GaAs interlayer. Comparison between photoluminescence (PL) spectra of InAs QDs with and without GaAs interlayer indicated that larger area density and much narrower size distribution of InAs QDs were obtained by inserting the GaAs interlayer. The area density of InAs QDs increased while the size distribution hardly changed when the thickness of InAs increased from 2.5 monolayer (ML) to 4 ML. However, when the thickness of InAs increased to 6 ML, the mean size of InAs QDs increased while the area density of InAs QDs decreased because of the coalescence of QDs. PL spectra with different thickness of GaAs interlayer indicated that the largest density of InAs QDs could be obtained when the thickness of GaAs interlayer was 3 nm. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25203
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X. Q.,Dua G. T.,Yin J. Z.,et al. Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer[J]. Journal of Crystal Growth,2002,234(2—3):379-383.
APA	Wang X. Q..,Dua G. T..,Yin J. Z..,Li M..,Li M. T..,...&Yang S. R..(2002).Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer.Journal of Crystal Growth,234(2—3),379-383.
MLA	Wang X. Q.,et al."Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer".Journal of Crystal Growth 234.2—3(2002):379-383.

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