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Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer
其他题名论文其他题名
Wang X. Q.; Du G. T.; Yin J. H.; Li M.; Li M. T.; Qu Y.; Bo B. X.; Yang S. R.
2002
发表期刊Journal of Crystal Growth
ISSN0022-0248
卷号235期号:1—4页码:60-64
摘要In this paper, InAs self-organized quantum dots (QDs) were deposited on (0 0 1)InP substrate with and without a GaAs interlayer by low pressure metalorganic chemical vapor deposition. An atomic force microscope image showed that InAs QDs arranged regularly on the GaAs interlayer. Comparison between photoluminescence (PL) spectra of InAs QDs with and without GaAs interlayer indicated that larger area density and much narrower size distribution of InAs QDs were obtained by inserting the GaAs interlayer. The area density of InAs QDs increased while the size distribution hardly changed when the thickness of InAs increased from 2.5 to 4 ML (monolayer). However, when the thickness of InAs increased to 6 ML, the mean size of InAs QDs increased while the area density of InAs QDs decreased because of the coalescence of QDs. PL spectra with different thickness of GaAs interlayer indicated that the largest density of InAs QDs could be obtained when the thickness of GaAs interlayer was 3 nm. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25202
专题中科院长春光机所知识产出
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GB/T 7714
Wang X. Q.,Du G. T.,Yin J. H.,et al. Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer[J]. Journal of Crystal Growth,2002,235(1—4):60-64.
APA Wang X. Q..,Du G. T..,Yin J. H..,Li M..,Li M. T..,...&Yang S. R..(2002).Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer.Journal of Crystal Growth,235(1—4),60-64.
MLA Wang X. Q.,et al."Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer".Journal of Crystal Growth 235.1—4(2002):60-64.
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