High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn

	High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn
其他题名	论文其他题名
	Chen S. J.; Liu Y. C.; Ma J. G.; Zhao D. X.; Zhi Z. Z.; Lu Y. M.; Zhang J. Y.; Shen D. Z.; Fan X. W.
	2002
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	240 期号:3—4 页码:467-472
摘要	In this paper, we report the preparation of nanocrystalline ZnO thin films on Si (100) substrates using a simple method, in which a resistive thermal evaporation of Zn and a two-step annealing process were employed. The aim of the first annealing step in an oxygen ambient at 300degreesC for 2 h is to form ZnO layers on the surface of the Zn films to prevent the diffusion of the metallic Zn from the films during the high-temperature annealing process, To obtain high-quality ZnO films, a high-temperature annealing step was performed at temperature in the range of 600-900degreesC. The effects of the annealing temperature on the photoluminescence (PL) and orientation of ZnO nanocrystalline thin films were studied. A very strong near-band-edge emission around 375 nm with a full-width at half-maximum of 105 meV and a relatively weak emission around 510 nm related to deep-level defects were observed, which indicated that high-quality ZnO films have been obtained. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25201
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen S. J.,Liu Y. C.,Ma J. G.,et al. High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn[J]. Journal of Crystal Growth,2002,240(3—4):467-472.
APA	Chen S. J..,Liu Y. C..,Ma J. G..,Zhao D. X..,Zhi Z. Z..,...&Fan X. W..(2002).High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn.Journal of Crystal Growth,240(3—4),467-472.
MLA	Chen S. J.,et al."High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn".Journal of Crystal Growth 240.3—4(2002):467-472.

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