A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed Bragg reflectors

	A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed Bragg reflectors
其他题名	论文其他题名
	Su Y. K.; Zhong J. C.; Chang S. J.
	2002
发表期刊	Ieee Photonics Technology Letters
ISSN	1041-1135
卷号	14 期号:10 页码:1388-1390
摘要	Taking into account the tunneling effect of the superlattice, the authors present for the first time a vertical-cavity surface-emitting laser with AlAs[GaAs-AlAs] semiconductor/superlattice distributed Bragg reflectors (DBRs). The structure of a 19-period-AlAs (73.3 nm)-18.5-pair [GaAs (3.0 nm)-AlAs (0.7 nm)] DBR was grown on an n-GaAs (100) substrate by molecular beam epitaxy, and the device was fabricated by using a modified technique of proton implantation. It was found from the experiments that the peak reflectivity of the DBR is as high as 99.7%, the central wavelength is at about 840 mn, and the reflection bandwidth is wide up to 90 rim. A 20 x 20 mum(2) square mesa on the top of the DBR was made by the wet chemical etching method to measure the series resistance of the devices. It can be seen that more than a third of them are within 20-30 Omega that lead to ideal optical characteristics, low dissipated power, and reliability-some of the most important factors for the devices to be used in a number of applications in the future.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25194
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Su Y. K.,Zhong J. C.,Chang S. J.. A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed Bragg reflectors[J]. Ieee Photonics Technology Letters,2002,14(10):1388-1390.
APA	Su Y. K.,Zhong J. C.,&Chang S. J..(2002).A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed Bragg reflectors.Ieee Photonics Technology Letters,14(10),1388-1390.
MLA	Su Y. K.,et al."A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed Bragg reflectors".Ieee Photonics Technology Letters 14.10(2002):1388-1390.

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