Photoluminescence of ZnSe-ZnS single quantum wells grown by vapour phase epitaxy

	Photoluminescence of ZnSe-ZnS single quantum wells grown by vapour phase epitaxy
其他题名	论文其他题名
	Lu Y. M.; Shen D. Z.; Liu Y. C.; Li B. H.; Zhang J. Y.; Fan X. W.; Iida S.; Kato A.
	2002
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	19 期号:1 页码:131-133
摘要	We study the photoluminescence (PL) of ultra thin layer ZnSe quantum wells in ZnS barriers. Samples with different well widths are grown by vapour phase epitaxy and the PL spectra of these samples are measured by the excitation of a 500 W Hg lamp. The peak positions of the bands coming from the excitonic luminescence show a larger blueshift with respect to the energy of free excitons in the ZnSe bulk material. The observed variation of the full width at half maximum and peak position of the bands in the spectra with the well width are interpreted to the formation of the ZnSxSe1-x alloy layer due to the interdiffusion in the interfaces between ZnSe and ZnS. According to the behaviour of the excitons in the smaller conduction band offset, the exciton binding energy is estimated from the dependence of the PL intensity on the temperature. from this result, excitons seem to show nearly three-dimensional characteristics.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25174
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lu Y. M.,Shen D. Z.,Liu Y. C.,et al. Photoluminescence of ZnSe-ZnS single quantum wells grown by vapour phase epitaxy[J]. Chinese Physics Letters,2002,19(1):131-133.
APA	Lu Y. M..,Shen D. Z..,Liu Y. C..,Li B. H..,Zhang J. Y..,...&Kato A..(2002).Photoluminescence of ZnSe-ZnS single quantum wells grown by vapour phase epitaxy.Chinese Physics Letters,19(1),131-133.
MLA	Lu Y. M.,et al."Photoluminescence of ZnSe-ZnS single quantum wells grown by vapour phase epitaxy".Chinese Physics Letters 19.1(2002):131-133.

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