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Formation of ZnSe1-xSx quantum dots under Volmer-Weber mode
其他题名论文其他题名
Shan C. X.; Fan X. W.; Zhang J. Y.; Zhang Z. Z.; Lu Y. M.; Liu Y. C.; Shen D. Z.; Kong X. G.
2002
发表期刊Journal of Materials Science-Materials in Electronics
ISSN0957-4522
卷号13期号:5页码:295-298
摘要ZnSe1-xSx quantum dots (QDs) grown directly onto GaAs substrates in Volmer-Weber (V-W) mode by low-pressure metallorganic chemical vapor deposition (MOCVD) are investigated. The value of x is determined by the photoluminescence (PL) spectra. The formation of QDs was confirmed by atomic force microscopy (AFM) images. When the growth duration is short, the surface of the substrate is full of pyramid-like dots; while increasing the duration, another kind of dome-like dots with larger size appear. Meanwhile, the density of the dots decreases with increasing growth duration. The above facts are explained systematically taking into account the surface free energy. The PL characteristics of the dots are also assessed. With increasing growth duration, the emission peak of the dots shows an obvious red-shift, which is due to a decrease in quantum confinement effect. (C) 2002 Kluwer Academic Publishers.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25172
专题中科院长春光机所知识产出
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Shan C. X.,Fan X. W.,Zhang J. Y.,et al. Formation of ZnSe1-xSx quantum dots under Volmer-Weber mode[J]. Journal of Materials Science-Materials in Electronics,2002,13(5):295-298.
APA Shan C. X..,Fan X. W..,Zhang J. Y..,Zhang Z. Z..,Lu Y. M..,...&Kong X. G..(2002).Formation of ZnSe1-xSx quantum dots under Volmer-Weber mode.Journal of Materials Science-Materials in Electronics,13(5),295-298.
MLA Shan C. X.,et al."Formation of ZnSe1-xSx quantum dots under Volmer-Weber mode".Journal of Materials Science-Materials in Electronics 13.5(2002):295-298.
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