Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Formation of ZnSe1-xSx quantum dots under Volmer-Weber mode | |
其他题名 | 论文其他题名 |
Shan C. X.; Fan X. W.; Zhang J. Y.; Zhang Z. Z.; Lu Y. M.; Liu Y. C.; Shen D. Z.; Kong X. G. | |
2002 | |
发表期刊 | Journal of Materials Science-Materials in Electronics |
ISSN | 0957-4522 |
卷号 | 13期号:5页码:295-298 |
摘要 | ZnSe1-xSx quantum dots (QDs) grown directly onto GaAs substrates in Volmer-Weber (V-W) mode by low-pressure metallorganic chemical vapor deposition (MOCVD) are investigated. The value of x is determined by the photoluminescence (PL) spectra. The formation of QDs was confirmed by atomic force microscopy (AFM) images. When the growth duration is short, the surface of the substrate is full of pyramid-like dots; while increasing the duration, another kind of dome-like dots with larger size appear. Meanwhile, the density of the dots decreases with increasing growth duration. The above facts are explained systematically taking into account the surface free energy. The PL characteristics of the dots are also assessed. With increasing growth duration, the emission peak of the dots shows an obvious red-shift, which is due to a decrease in quantum confinement effect. (C) 2002 Kluwer Academic Publishers. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25172 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Shan C. X.,Fan X. W.,Zhang J. Y.,et al. Formation of ZnSe1-xSx quantum dots under Volmer-Weber mode[J]. Journal of Materials Science-Materials in Electronics,2002,13(5):295-298. |
APA | Shan C. X..,Fan X. W..,Zhang J. Y..,Zhang Z. Z..,Lu Y. M..,...&Kong X. G..(2002).Formation of ZnSe1-xSx quantum dots under Volmer-Weber mode.Journal of Materials Science-Materials in Electronics,13(5),295-298. |
MLA | Shan C. X.,et al."Formation of ZnSe1-xSx quantum dots under Volmer-Weber mode".Journal of Materials Science-Materials in Electronics 13.5(2002):295-298. |
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