Semiconductor optical amplifier optical gate with graded strained bulk-like active structure

	Semiconductor optical amplifier optical gate with graded strained bulk-like active structure
其他题名	论文其他题名
	Zhang R. Y.; Dong J.; Feng Z. W.; Zhou F.; Tian H. L.; Shu H. Y.; Zhao L. J.; Bian J.; Wang W.
	2003
发表期刊	Optical Engineering
ISSN	0091-3286
卷号	42 期号:3 页码:798-802
摘要	A novel semiconductor optical amplifier (SOA) optical gate with a graded strained bulk-like active structure is proposed. A fiber-to-fiber gain of 10 dB when the coupling loss reaches 7 dB/factet and a polarization insensitivity of less than 0.9 dB for multiwavelength and different power input signals over the whole operation current are obtained. Moreover, for our SOA optical gate, a no-loss current of 50 to 70 mA and an extinction ratio of more than 50 dB are realized when the injection current is more than no-loss current, and the maximum extinction ratio reaches 71 dB, which is critical for crosstalk suppression. (C) 2003 society of Photo-Optical Instrumentation Engineers.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25166
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang R. Y.,Dong J.,Feng Z. W.,et al. Semiconductor optical amplifier optical gate with graded strained bulk-like active structure[J]. Optical Engineering,2003,42(3):798-802.
APA	Zhang R. Y..,Dong J..,Feng Z. W..,Zhou F..,Tian H. L..,...&Wang W..(2003).Semiconductor optical amplifier optical gate with graded strained bulk-like active structure.Optical Engineering,42(3),798-802.
MLA	Zhang R. Y.,et al."Semiconductor optical amplifier optical gate with graded strained bulk-like active structure".Optical Engineering 42.3(2003):798-802.

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