Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy

	Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy
其他题名	论文其他题名
	Li S. W.; Koike K.; Yano M.; Jin Y. X.
	2003
发表期刊	Physica B-Condensed Matter
ISSN	0921-4526
卷号	325 期号:1—4 页码:41-45
摘要	A quantum dot (QD) can capture and emit carriers, the behavior of which is similar to that of a giant trap, and stacked QDs with a size-controlled growth show a strong tendency to align vertically. The discrete energy level properties of the self-assembled vertically stacked InAs QDs in Al0.5Ga0.5As are studied by means of deep level transient spectroscopy (DLTS) and photoluminescence (PL) spectroscopy, The DLTS measurement displays the spectra of hole and electron discrete energy levels as positive and negative peaks, respectively, which illustrates that the DLTS is a capable tool to study the optical and electrical properties of the QDs. The PL emission peaks are found to completely correspond to the DLTS signals. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25165
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Koike K.,Yano M.,et al. Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy[J]. Physica B-Condensed Matter,2003,325(1—4):41-45.
APA	Li S. W.,Koike K.,Yano M.,&Jin Y. X..(2003).Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy.Physica B-Condensed Matter,325(1—4),41-45.
MLA	Li S. W.,et al."Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy".Physica B-Condensed Matter 325.1—4(2003):41-45.

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