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Field emission from amorphous carbon nitride films deposited on silicon tip arrays
其他题名论文其他题名
Li J. J.; Zheng W. T.; Sun L.; Bian H. J.; Jin Z. S.; Zhao H. F.; Song H.; Meng S. H.; He X. D.; Han J. C.
2003
发表期刊Chinese Physics Letters
ISSN0256-307X
卷号20期号:6页码:944-946
摘要Amorphous carbon nitride films (a-CNx) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CNx Elms. In addition, the Elms deposited on silicon tips have a smaller effective work function (F = 0.024 eV) of electron field emission than that on silicon wafer (F = 0.060 eV), which indicates a significant enhancement of the ability of electron field emission from a-CNx films.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25158
专题中科院长春光机所知识产出
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GB/T 7714
Li J. J.,Zheng W. T.,Sun L.,et al. Field emission from amorphous carbon nitride films deposited on silicon tip arrays[J]. Chinese Physics Letters,2003,20(6):944-946.
APA Li J. J..,Zheng W. T..,Sun L..,Bian H. J..,Jin Z. S..,...&Han J. C..(2003).Field emission from amorphous carbon nitride films deposited on silicon tip arrays.Chinese Physics Letters,20(6),944-946.
MLA Li J. J.,et al."Field emission from amorphous carbon nitride films deposited on silicon tip arrays".Chinese Physics Letters 20.6(2003):944-946.
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