Effects of thermal treatment on the properties of ZnO films deposited on MgO-buffered Si substrates

	Effects of thermal treatment on the properties of ZnO films deposited on MgO-buffered Si substrates
其他题名	论文其他题名
	Chen S. J.; Liu Y. C.; Ma J. G.; Lu Y. M.; Zhang J. Y.; Shen D. Z.; Fan X. W.
	2003
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	254 期号:1—2 页码:86-91
摘要	High quality ZnO thin films have been grown on Si (100) substrates with MgO buffer layers. An electron beam evaporation technique was used to grow MgO buffer layer on Si substrates followed by a magnetron sputtering process to deposit Zn films on the MgO-buffered Si substrates, next, a two-step annealing process was employed to oxidize the Zn films to form ZnO. The effects of the annealing temperature on the photoluminescence (PL) and orientation of ZnO nanocrystalline thin films were studied. For ZnO films annealed between 400degreesC and 700degreesC in an O-2 ambient, the quality of the ZrO films was improved with increasing annealing temperature. However, as the annealing temperature was increased to over 800degreesC, the ZnO film under-went a phase transformation from ZnO to a MgxZn1-xO alloy, where the x value in the alloy increased with increasing annealing temperature. The MgxZn1-xO alloy films were characterized by X-ray diffraction (XRD), photoluminescence (PL)and reflection spectra. XRD results show that the MgxZn1-xO alloy films maintain the hexagonal structure with a lattice constant close to that of ZnO. In films with Mg incorporation, intense ultraviolet band edge photoluminescence was observed at room temperature. The photoluminescence (PL) spectra show that MgxZn1-xO alloy has a wide band gap with a large exciton binding energy of 53 meV. The band gap of the MgxZn1-xO alloy shifts to higher energy with increasing annealing temperature. The blue-shift of the fundamental band gap of the alloy annealed at 1000degreesC is estimated to be similar to300meV. (C) 2003 Published by Elsevier Science B.V.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25155
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen S. J.,Liu Y. C.,Ma J. G.,et al. Effects of thermal treatment on the properties of ZnO films deposited on MgO-buffered Si substrates[J]. Journal of Crystal Growth,2003,254(1—2):86-91.
APA	Chen S. J..,Liu Y. C..,Ma J. G..,Lu Y. M..,Zhang J. Y..,...&Fan X. W..(2003).Effects of thermal treatment on the properties of ZnO films deposited on MgO-buffered Si substrates.Journal of Crystal Growth,254(1—2),86-91.
MLA	Chen S. J.,et al."Effects of thermal treatment on the properties of ZnO films deposited on MgO-buffered Si substrates".Journal of Crystal Growth 254.1—2(2003):86-91.

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