High-quality ZnO/GaN/Al2O3 heteroepitaxial structure grown by LP-MOCVD

	High-quality ZnO/GaN/Al2O3 heteroepitaxial structure grown by LP-MOCVD
其他题名	论文其他题名
	Zhao B. J.; Yang H. J.; Du G. T.; Miao G. Q.; Zhang Y. T.; Gao Z. M.; Yang T. P.; Wang J. Z.; Li W. C.; Ma Y.; Yang X. T.; Liu B. Y.; Liu D. L.; Fang X. J.
	2003
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	258 期号:1—2 页码:130-134
摘要	High-quality ZnO films were grown on epi-GaN predeposited on c-Al2O3 substrates using low-pressure metal-organic chemical vapor deposition (MOCVD). Detailed study of the X-ray diffraction spots and patterns by different diffractometers showed high structural perfection of the zinc oxide layer, which indicated that the growth of ZnO film was strongly c-oriented. The full-width at half-maximum (FWHM) of the omega-rocking curve was 0.39degrees. Surface morphology of the films studied by AFM showed that the growth of the ZnO film followed the regular hexagonal column structure with about 500 nm grain diameter. Zn and 0 elements in the deposited ZnO/GaN/Al2O3 films were investigated and compared by X-ray photoelectron spectroscopy (XPS), in which the dissociative 0 and Zn atom peak was hardly observed. The ratio of O/Zn atoms of the film was about I with O-rich. Photoluminescence spectra of the ZnO films grown, on epi-GaN showed dominating exciton emission peak, and the deep-level emission which was obvious on ZnO/Al2O3 film had hardly been observed. (C) 2003 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25154
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao B. J.,Yang H. J.,Du G. T.,et al. High-quality ZnO/GaN/Al2O3 heteroepitaxial structure grown by LP-MOCVD[J]. Journal of Crystal Growth,2003,258(1—2):130-134.
APA	Zhao B. J..,Yang H. J..,Du G. T..,Miao G. Q..,Zhang Y. T..,...&Fang X. J..(2003).High-quality ZnO/GaN/Al2O3 heteroepitaxial structure grown by LP-MOCVD.Journal of Crystal Growth,258(1—2),130-134.
MLA	Zhao B. J.,et al."High-quality ZnO/GaN/Al2O3 heteroepitaxial structure grown by LP-MOCVD".Journal of Crystal Growth 258.1—2(2003):130-134.

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