The growth of the CdxZn1-xTe epilayers by low-pressure metalorganic vapor-phase epitaxy

	The growth of the CdxZn1-xTe epilayers by low-pressure metalorganic vapor-phase epitaxy
其他题名	论文其他题名
	Zhang Z. Z.; Shen D. Z.; Shan C. X.; Zhang J. Y.; Lu Y. M.; Liu Y. C.; Fan X. W.
	2003
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	429 期号:1—2 页码:211-215
摘要	In this paper, CdxZn1-xTe epilayers with different Cd contents ranging from 0 to 1 were grown on GaAs (10 0) substrates by low-pressure metalorganic vapor-phase epitaxy. The CdxZn1-xTe epilayers were characterized by using the X-ray diffraction, scanning electron microscopy and photoluminescence measurements. When the flow rates of the precursors were kept at constants, the Cd content in the CdxZn1-xTe epilayers decreased with the increase of the substrate temperature. This phenomenon was considered to be related to absorption and desorption characters of the reactants. (C) 2003 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25148
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Z. Z.,Shen D. Z.,Shan C. X.,et al. The growth of the CdxZn1-xTe epilayers by low-pressure metalorganic vapor-phase epitaxy[J]. Thin Solid Films,2003,429(1—2):211-215.
APA	Zhang Z. Z..,Shen D. Z..,Shan C. X..,Zhang J. Y..,Lu Y. M..,...&Fan X. W..(2003).The growth of the CdxZn1-xTe epilayers by low-pressure metalorganic vapor-phase epitaxy.Thin Solid Films,429(1—2),211-215.
MLA	Zhang Z. Z.,et al."The growth of the CdxZn1-xTe epilayers by low-pressure metalorganic vapor-phase epitaxy".Thin Solid Films 429.1—2(2003):211-215.

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