Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

	Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors
其他题名	论文其他题名
	Yuan T.; Jin C. S.; Jin Y. X.
	2003
发表期刊	Microelectronics Journal
ISSN	0026-2692
卷号	34 期号:4 页码:305-312
摘要	In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p(2)Ga(0.8)In(0.2)As(0.19)Sb(0.81)/p(1)-Ga0.9In0.1As0.09Sb0.91 and N-1-GaSb/n(2)-Ga0.9In0.1As0.09Sb0.91/p-Ga0.8In0.2As0.19Sb0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga0.8In0.2As0.19Sb0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N-1-n(2)-p Structure is more sensitive, than that with the p(1)-side surface recombination velocity for the N-p(2)-p(1) structure. In the N-p(2)-p(1) structure with the incident light from the p(1)-side surface, two-color detection is achieved. (C) 2003 Elsevier Science Ltd. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25147
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yuan T.,Jin C. S.,Jin Y. X.. Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors[J]. Microelectronics Journal,2003,34(4):305-312.
APA	Yuan T.,Jin C. S.,&Jin Y. X..(2003).Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors.Microelectronics Journal,34(4),305-312.
MLA	Yuan T.,et al."Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors".Microelectronics Journal 34.4(2003):305-312.

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