Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films | |
| 其他题名 | 论文其他题名 |
| Chen S. J.; Liu Y. C.; Zhang J. Y.; Lu Y. M.; Shen D. Z.; Fan X. W. | |
| 2003 | |
| 发表期刊 | Journal of Physics-Condensed Matter
 |
| ISSN | 0953-8984 |
| 卷号 | 15期号:12页码:1975-1981 |
| 摘要 | Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn3P2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I-4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25141 |
| 专题 | 中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Chen S. J.,Liu Y. C.,Zhang J. Y.,et al. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films[J]. Journal of Physics-Condensed Matter,2003,15(12):1975-1981. |
| APA | Chen S. J.,Liu Y. C.,Zhang J. Y.,Lu Y. M.,Shen D. Z.,&Fan X. W..(2003).Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films.Journal of Physics-Condensed Matter,15(12),1975-1981. |
| MLA | Chen S. J.,et al."Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films".Journal of Physics-Condensed Matter 15.12(2003):1975-1981. |
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