Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots

	Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots
其他题名	论文其他题名
	Li S. W.; Koike K.; Sasa S.; Inoue M.; Yano M.; Jin Y. X.
	2003
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	126 期号:10 页码:563-566
摘要	Quantum dots (QDs), which capture and emit carriers like a giant trap, are studied using deep level transient spectroscopy (DLTS). The electrons and holes in the QDs are emitted from the relevant energy levels to the conduction and valence bands, respectively, of the barrier layers with increasing temperature. The thermal emission energies from the QDs are related to their initial energy levels. In this paper, five-period vertically stacked InAs QDs in the barrier layers of a field-effect type structure are measured. The results agree well with capacitance-voltage and photoluminescence measurements. In addition, the dependence of DLTS signal on the pulse voltage and light illumination is presented. The results prove that DLTS is a powerful tool for the study of the electronic structure of QDs. (C) 2003 Elsevier Science Ltd. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25138
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Koike K.,Sasa S.,et al. Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots[J]. Solid State Communications,2003,126(10):563-566.
APA	Li S. W.,Koike K.,Sasa S.,Inoue M.,Yano M.,&Jin Y. X..(2003).Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots.Solid State Communications,126(10),563-566.
MLA	Li S. W.,et al."Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots".Solid State Communications 126.10(2003):563-566.

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