Temperature-dependent photoluminescence of ZnTe films grown on Si substrates

	Temperature-dependent photoluminescence of ZnTe films grown on Si substrates
其他题名	论文其他题名
	Shan C. X.; Fan X. W.; Zhang J. Y.; Zhang Z. Z.; Lu Y. M.; Liu Y. C.; Shen D. Z.
	2003
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	20 期号:11 页码:2049-2052
摘要	ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition (MOCVD), and the temperature-dependent photoluminescence (PL) properties were investigated. The near-band-edge (NBE) emission of the ZnTe sample at 83K shows an asymmetry line shape, which can be decomposed into two Gaussian lines labelled by FE and BE. Temperature-dependent PL intensity of the NBE peak shows two variation regions, and an expression with two dissociation channels fits well to the experimental data. The results of the temperature-dependent full width at half maximum (FWHM) and peak energy were well understood under the framework of the two-dissociation-channel model. That is, at low temperature, the emission from bound excitons governs the NBE peak, while above 157 K, the free exciton emission becomes dominant gradually. A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25109
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Shan C. X.,Fan X. W.,Zhang J. Y.,et al. Temperature-dependent photoluminescence of ZnTe films grown on Si substrates[J]. Chinese Physics Letters,2003,20(11):2049-2052.
APA	Shan C. X..,Fan X. W..,Zhang J. Y..,Zhang Z. Z..,Lu Y. M..,...&Shen D. Z..(2003).Temperature-dependent photoluminescence of ZnTe films grown on Si substrates.Chinese Physics Letters,20(11),2049-2052.
MLA	Shan C. X.,et al."Temperature-dependent photoluminescence of ZnTe films grown on Si substrates".Chinese Physics Letters 20.11(2003):2049-2052.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Shan-2003-Temperatur（233KB）			开放获取	--	浏览下载