The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction

	The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction
其他题名	论文其他题名
	Zhang D. K.; Liu Y. C.; Liu Y. L.; Yang H.
	2004
发表期刊	Physica B-Condensed Matter
ISSN	0921-4526
卷号	351 期号:1—2 页码:178-183
摘要	A Cu2O/ZnO/ITO p-i-n heterojunction was fabricated by electrochemical deposition method. The electrical properties of the p-Cu2O/i-ZnO/n-ITO heterojunction were studied using the current-voltage measurements. A distinct junction characteristic was observed. Here, the forward and reverse turn-on voltages were about 0.53 and -0.60 V, respectively. An energy-band diagram was proposed to analyze the electrical properties. In terms of the results of the current-voltage measurements, it was deduced that the turn-on voltage was smaller than the barrier potential, which was ascribed to the existence of the interface defect states. The mechanism of charge transportation was discussed and a tunnel recombination process was proposed to explain its electrical properties. (C) 2004 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25108
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang D. K.,Liu Y. C.,Liu Y. L.,et al. The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction[J]. Physica B-Condensed Matter,2004,351(1—2):178-183.
APA	Zhang D. K.,Liu Y. C.,Liu Y. L.,&Yang H..(2004).The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction.Physica B-Condensed Matter,351(1—2),178-183.
MLA	Zhang D. K.,et al."The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction".Physica B-Condensed Matter 351.1—2(2004):178-183.

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