A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics

	A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics
其他题名	论文其他题名
	Yan C. L.; Ning Y. Q.; Qin L.; Zhang S. M.; Wang Q.; Zhao L. M.; Jin Z. H.; Sun Y. F.; Tao G. T.; Liu Y.; Chu G. Q.; Wang L. J.; Jiang H. L.
	2004
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	19 期号:6 页码:685-689
摘要	A high power bottom-emitting InGaAs/GaAsP vertical-cavity surface-emitting laser with a large aperture (400 mum diameter) is described. The device has been fabricated by using oxidation confinement technology. The device threshold current is 6 10 mA, and the maximum output power is up to the watt regime (1.42 W) at room temperature (24 degreesC) with a pulse condition (pulse width of 50 mus, repetition rate of 1 kHz). The maximum continuous wave optical output power at room temperature is as high as 1.09 W. The lasing peak wavelength is 987 nm, the full width at half-maximum is 0.9 nm, and the far-field divergence angle is below 10degrees. The temperature characteristics of the device are also obtained. A special temperature dependence of the threshold current in the vertical-cavity surface-emitting laser structure is observed; the characteristic temperature T-0 is over 220 K, and the wavelength shift with temperature is only about 0.06 nm K-1.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25106
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yan C. L.,Ning Y. Q.,Qin L.,et al. A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics[J]. Semiconductor Science and Technology,2004,19(6):685-689.
APA	Yan C. L..,Ning Y. Q..,Qin L..,Zhang S. M..,Wang Q..,...&Jiang H. L..(2004).A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics.Semiconductor Science and Technology,19(6),685-689.
MLA	Yan C. L.,et al."A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics".Semiconductor Science and Technology 19.6(2004):685-689.

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