Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector

	Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector
其他题名	论文其他题名
	Jun L.; Hang S.; Jin Y. X.; Hong J.; Miao G. Q.; Zhao H. F.
	2004
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	19 期号:6 页码:690-694
摘要	A resonant-cavity-enhanced (RCE) PIN photodetector has high bandwidth and high sensitivity compared with traditional PIN photodetectors. In this paper, the structure of a RCE GaInAsSb/GaSb photodetector has been designed so that the light is incident from the substrate. The top reflector for this structure is made of 9.5-15.5 periods of InAs/GaSb quarter wave stacks (QWS) and the bottom reflector is composed of three periods of SiO2/Si QWS. An antireflection coating with more than 99% transmissivity is deposited on the substrate surface. A simulation shows that the quantum efficiency could be more than 90% at the operating wavelength 2.4 mum. The device has two spectral response peaks, which could make the device function as a double-colour detector.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25103
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jun L.,Hang S.,Jin Y. X.,et al. Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector[J]. Semiconductor Science and Technology,2004,19(6):690-694.
APA	Jun L.,Hang S.,Jin Y. X.,Hong J.,Miao G. Q.,&Zhao H. F..(2004).Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector.Semiconductor Science and Technology,19(6),690-694.
MLA	Jun L.,et al."Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector".Semiconductor Science and Technology 19.6(2004):690-694.

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