ZnS/CdS/ZnS quantum dot quantum well produced in inverted micelles

	ZnS/CdS/ZnS quantum dot quantum well produced in inverted micelles
其他题名	论文其他题名
	Cao L. X.; Huang S. H.; Shulin E.
	2004
发表期刊	Journal of Colloid and Interface Science
ISSN	0021-9797
卷号	273 期号:2 页码:478-482
摘要	A ZnS/CdS/ZnS quantum dot quantum well was prepared in AOT micelles successfully and was characterized by absorption spectroscopy and fluorescence spectroscopy. Luminescence in the region of 350-600 nm was observed. The complete ZnS shell might reduce the number of defects on the surface of the US well, which were assumed to act as centers for radiationless recombination, resulting in the luminescence enhancement. (C) 2004 Elsevier Inc. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25101
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Cao L. X.,Huang S. H.,Shulin E.. ZnS/CdS/ZnS quantum dot quantum well produced in inverted micelles[J]. Journal of Colloid and Interface Science,2004,273(2):478-482.
APA	Cao L. X.,Huang S. H.,&Shulin E..(2004).ZnS/CdS/ZnS quantum dot quantum well produced in inverted micelles.Journal of Colloid and Interface Science,273(2),478-482.
MLA	Cao L. X.,et al."ZnS/CdS/ZnS quantum dot quantum well produced in inverted micelles".Journal of Colloid and Interface Science 273.2(2004):478-482.