Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films

	Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films
其他题名	论文其他题名
	Zhang X. T.; Liu H. W.; Taguchi T.; Meng Q. B.; Sato O.; Fujishima A.
	2004
发表期刊	Solar Energy Materials and Solar Cells
ISSN	0927-0248
卷号	81 期号:2 页码:197-203
摘要	Al2O3-coated TiO2 porous films were used to fabricate solid-state dye-sensitized solar cells using CuI as hole conductor. Investigation with transient photovoltage measurements showed that the Al2O3 interlayer slowed down the interfacial recombination of electrons in TiO2 with holes in CuI by forming a potential barrier at the TiO2/CuI interface. As a consequence, the cell made from Al2O3-coated TiO2 film showed superior cell performance than the cell made from TiO2 film only, especially under relative high intensity of simulated sunlight. (C) 2003 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25100
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang X. T.,Liu H. W.,Taguchi T.,et al. Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films[J]. Solar Energy Materials and Solar Cells,2004,81(2):197-203.
APA	Zhang X. T.,Liu H. W.,Taguchi T.,Meng Q. B.,Sato O.,&Fujishima A..(2004).Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films.Solar Energy Materials and Solar Cells,81(2),197-203.
MLA	Zhang X. T.,et al."Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films".Solar Energy Materials and Solar Cells 81.2(2004):197-203.

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