Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films | |
其他题名 | 论文其他题名 |
Xu H. Y.; Liu Y. C.; Ma J. G.; Luo Y. M.; Lu Y. M.; Shen D. Z.; Zhang J. Y.; Fan X. W.; Mu R. | |
2004 | |
发表期刊 | Journal of Physics-Condensed Matter
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ISSN | 0953-8984 |
卷号 | 16期号:28页码:5143-5150 |
摘要 | F-passivated ZnO nanocrystalline films were prepared by thermal oxidation of ZnF2 films. ZnF2 films were deposited on a Si wafer by the electron beam evaporation technique. X-ray diffraction and x-ray photoelectron spectroscopy were used to study the structural changes of ZnF2 as a function of oxidation temperature. When the ZnF2 film was oxidized at 400degreesC for 30 min, a polycrystalline hexagonal wurtzite structure of ZnO:F was obtained. The room temperature photoluminescence spectrum of the ZnO:F film showed a strong near band edge ultraviolet emission located at 379 nm with a narrow linewidth of 70 meV and a very weak visible emission associated with deep level defects. The results demonstrated that the presence of residual F ions in ZnO nanocrystalline film can dramatically decrease the visible emission and increase the ultraviolet emission of ZnO. On the basis of the experimental findings, two possible mechanisms are proposed: (1) the residual F ions in the film occupy the lattice sites of Vo* centres (the oxygen vacancies with one electron) inside the ZnO nanocrystals, which results in an appreciable decrease in visible emission and (2) some of the F ions also passivate ZnO nanocrystal surface states, which prevents the holes in the valence band from being trapped in surface states and then tunnelling back into nanocrystals to combine with Vo* to form Vo** centres (Vo* + h --> Vo**) which are another source of visible emission. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25091 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Xu H. Y.,Liu Y. C.,Ma J. G.,et al. Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films[J]. Journal of Physics-Condensed Matter,2004,16(28):5143-5150. |
APA | Xu H. Y..,Liu Y. C..,Ma J. G..,Luo Y. M..,Lu Y. M..,...&Mu R..(2004).Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films.Journal of Physics-Condensed Matter,16(28),5143-5150. |
MLA | Xu H. Y.,et al."Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF2 films".Journal of Physics-Condensed Matter 16.28(2004):5143-5150. |
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