Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer

	Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer
其他题名	论文其他题名
	Yan J. F.; Lu Y. M.; Liu Y. C.; Liang H. W.
	2004
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	266 期号:4 页码:505-510
摘要	In this paper, a high-quality ZnO thin film was first grown on a Si(1 1 1) substrate by plasma-assisted molecular beam epitaxv. A ZnO thin film grown at 300degreesC was used as an intermediate layer for the growth. The dependence of the ZnO thin-film quality on the substrate temperature was studied by using X-ray diffraction and photoluminescence (PL). Only poly crystal ZnO could be obtained from direct growth on the Si substrate, because of the large differences in lattice constant between the Si substrate and ZnO thin film and the existence of an oxide layer on the Si surface. The best ZnO was obtained at a substrate temperature of 550degreesC. A low-temperature ZnO buffer layer is induced between the substrate and ZnO film to reduce the effects of the oxide layer and the mismatch. Next, a high-temperature ZnO layer is deposited on this buffer layer to obtain a high-quality thin film. The effects of the buffer layer on the structure and PL of ZnO thin films are studied. For the ZnO films employing the buffer layer, only one peak from the ZnO (0 0 2) orientation is obtained in the X-ray diffraction measurement, and the full-width at half-maximum (FWHM) of the (0 0 2) ZnO peak is less than 0.180degrees. The ZnO thin film exhibits a smooth surface as measured by atomic force microscopy, and the PL spectra show a strong ultraviolet band emissions with little or no deep-level emission related to defects. The FWHMs of the PL spectra are narrower compared to the ZnO film without a buffer layer. These measurements indicate that high-quality ZnO films can be obtained by employing a low-temperature grown ZnO buffer layer. (C) 2004 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25085
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yan J. F.,Lu Y. M.,Liu Y. C.,et al. Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer[J]. Journal of Crystal Growth,2004,266(4):505-510.
APA	Yan J. F.,Lu Y. M.,Liu Y. C.,&Liang H. W..(2004).Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer.Journal of Crystal Growth,266(4),505-510.
MLA	Yan J. F.,et al."Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer".Journal of Crystal Growth 266.4(2004):505-510.

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