Calculation of the R(0)A product in n(+)-n-p and p(+)-p-n GaInASSb infrared detectors

	Calculation of the R(0)A product in n(+)-n-p and p(+)-p-n GaInASSb infrared detectors
其他题名	论文其他题名
	Yuan T.; Chua S. J.; Jin Y. X.
	2004
发表期刊	Infrared Physics & Technology
ISSN	1350-4495
卷号	45 期号:3 页码:181-189
摘要	In this paper, the zero-bias resistance areas product R(0)A is calculated in the n(+)-n-p and p(+)-p-n Ga0.8In0.2As0.81Sb0.19 infrared detectors, on the base of the material parameters in the three layers. The calculated results show that parameters in the heavily doped layer in the different structures have different influences on R(0)A. Moreover, R(0)A in the n(+)n-p structure is higher than that in the p(+)-p-n structure because the higher carrier concentration in the n(+)-region for the n(+)-n-p structure improves R(0)A whereas the one in the p(+)-region for the p(+)-p-n structure reduces R(0)A. (C) 2003 Elsevier Ltd. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25083
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yuan T.,Chua S. J.,Jin Y. X.. Calculation of the R(0)A product in n(+)-n-p and p(+)-p-n GaInASSb infrared detectors[J]. Infrared Physics & Technology,2004,45(3):181-189.
APA	Yuan T.,Chua S. J.,&Jin Y. X..(2004).Calculation of the R(0)A product in n(+)-n-p and p(+)-p-n GaInASSb infrared detectors.Infrared Physics & Technology,45(3),181-189.
MLA	Yuan T.,et al."Calculation of the R(0)A product in n(+)-n-p and p(+)-p-n GaInASSb infrared detectors".Infrared Physics & Technology 45.3(2004):181-189.

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