A control on the photoluminescence properties in P-passivated nanocrystalline ZnO films

	A control on the photoluminescence properties in P-passivated nanocrystalline ZnO films
其他题名	论文其他题名
	Chen S. J.; Liu Y. C.; Shao C. L.; Lu Y. M.; Zhang J. Y.; Shen D. Z.; Fan X. W.
	2004
发表期刊	Chemical Physics Letters
ISSN	0009-2614
卷号	397 期号:4—6 页码:360-363
摘要	P-passivated nanocrystalline ZnO films on InP substrates were prepared by thermal oxidation of Zn films. By a simple thermal annealing cycle process, uniform photoluminescence (PL) samples with controllable visible emission and intense UV emission were obtained at different annealing conditions. Through a detailed study of the photoluminescence spectra of P-passivated nano-ZnO films vs the annealing-temperature and annealing-time, it is shown that applying different annealing time or temperatures provides a very practical technique to control the deep-level defect emission. A core-shell structure model of the surface passivation was helpfully used to discuss the P-passivation mechanism. (C) 2004 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25069
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen S. J.,Liu Y. C.,Shao C. L.,et al. A control on the photoluminescence properties in P-passivated nanocrystalline ZnO films[J]. Chemical Physics Letters,2004,397(4—6):360-363.
APA	Chen S. J..,Liu Y. C..,Shao C. L..,Lu Y. M..,Zhang J. Y..,...&Fan X. W..(2004).A control on the photoluminescence properties in P-passivated nanocrystalline ZnO films.Chemical Physics Letters,397(4—6),360-363.
MLA	Chen S. J.,et al."A control on the photoluminescence properties in P-passivated nanocrystalline ZnO films".Chemical Physics Letters 397.4—6(2004):360-363.

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