Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine

	Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine
其他题名	论文其他题名
	Yuan J. F.; Zhang J. D.; Wang J.; Yan D. H.; Xu W.
	2004
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	450 期号:2 页码:316-319
摘要	The effects of positive and negative gate-bias stress on organic field-effect transistors (OFET) based on tantalum (Ta)/tantalum pentoxide (Ta2O5)/fluorinated copper phthalocyanine (F16CuPc) structure are investigated as a function of stress time and stress temperature. It is shown that gate-bias stress induces a parallel threshold voltage shift (DeltaV(T)) of OFETs without changes of field-effect mobility mu(EF) and sub-threshold slope (DeltaS). The DeltaV(T) is observed to be logarithmically dependent on time at high gate-bias appropriate to OFET operation. More importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. The threshold voltage shift is temperature dependent with activation energy of 0.51 eV We concluded that threshold voltage shift of the OFET with F16CuPc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution. (C) 2003 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25062
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yuan J. F.,Zhang J. D.,Wang J.,et al. Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine[J]. Thin Solid Films,2004,450(2):316-319.
APA	Yuan J. F.,Zhang J. D.,Wang J.,Yan D. H.,&Xu W..(2004).Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine.Thin Solid Films,450(2),316-319.
MLA	Yuan J. F.,et al."Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine".Thin Solid Films 450.2(2004):316-319.

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