Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine | |
其他题名 | 论文其他题名 |
Yuan J. F.; Zhang J. D.; Wang J.![]() | |
2004 | |
发表期刊 | Thin Solid Films
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ISSN | 0040-6090 |
卷号 | 450期号:2页码:316-319 |
摘要 | The effects of positive and negative gate-bias stress on organic field-effect transistors (OFET) based on tantalum (Ta)/tantalum pentoxide (Ta2O5)/fluorinated copper phthalocyanine (F16CuPc) structure are investigated as a function of stress time and stress temperature. It is shown that gate-bias stress induces a parallel threshold voltage shift (DeltaV(T)) of OFETs without changes of field-effect mobility mu(EF) and sub-threshold slope (DeltaS). The DeltaV(T) is observed to be logarithmically dependent on time at high gate-bias appropriate to OFET operation. More importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. The threshold voltage shift is temperature dependent with activation energy of 0.51 eV We concluded that threshold voltage shift of the OFET with F16CuPc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution. (C) 2003 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25062 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Yuan J. F.,Zhang J. D.,Wang J.,et al. Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine[J]. Thin Solid Films,2004,450(2):316-319. |
APA | Yuan J. F.,Zhang J. D.,Wang J.,Yan D. H.,&Xu W..(2004).Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine.Thin Solid Films,450(2),316-319. |
MLA | Yuan J. F.,et al."Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine".Thin Solid Films 450.2(2004):316-319. |
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