A twinned PbTe film induced by the 7x7 reconstruction of Si(111)

	A twinned PbTe film induced by the 7x7 reconstruction of Si(111)
其他题名	论文其他题名
	Chen H. Y.; Dong S. S.; Yang Y. K.; Li D. M.; Zhang J. H.; Wang X. J.; Kan S. H.; Zou G. T.
	2004
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	273 期号:1—2 页码:156-160
摘要	The PbTe films were grown on Si(1 1 1) substrate by hot wall epitaxy (HWE). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the films. The results show that the PbTe films are twinned ones with preferred <1 0 0> orientation. The angles of normal direction of PbTe(1 0 0) facets which are perpendicular to the surface of Si substrate are 30degrees or 60degrees. The interface energy is calculated by CASTEP module of materials studio and the reason for this phenomenon is discussed. (C) 2004 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25057
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen H. Y.,Dong S. S.,Yang Y. K.,et al. A twinned PbTe film induced by the 7x7 reconstruction of Si(111)[J]. Journal of Crystal Growth,2004,273(1—2):156-160.
APA	Chen H. Y..,Dong S. S..,Yang Y. K..,Li D. M..,Zhang J. H..,...&Zou G. T..(2004).A twinned PbTe film induced by the 7x7 reconstruction of Si(111).Journal of Crystal Growth,273(1—2),156-160.
MLA	Chen H. Y.,et al."A twinned PbTe film induced by the 7x7 reconstruction of Si(111)".Journal of Crystal Growth 273.1—2(2004):156-160.

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