Temperature-dependent photoluminescence in coupling structures of CdSe quantum dots and a ZnCdSe quantum well

	Temperature-dependent photoluminescence in coupling structures of CdSe quantum dots and a ZnCdSe quantum well
其他题名	论文其他题名
	Jin H.; Zhang L. G.; Zheng Z. H.; An L. N.; Lu Y. M.; Zhang J. Y.; Fan X. W.; Shen D. Z.
	2005
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	22 期号:6 页码:1518-1521
摘要	A coupling structure of CdSe quantum dots (QDs) and a ZnCdSe quantum well (QW) is fabricated by using the molecular-beam epitaxy technique. The effect of temperature on the photoluminescence (PL) of the structure is studied. The results reveal that the activation energy of exciton dissociation in the coupling QDs/QW structure is much higher than that of simple CdSe QDs, which is attributed to the exciton tunnelling from the QW to QDs through a thin ZnSe barrier layer. The results also reveal that the position and width of the emission band of the QDs vary discontinuously at certain temperatures. This phenomenon is explained by the QD ionization and exciton tunnelling from the QW to the QDs. It is demonstrated that the coupling structure significantly improves the PL intensity of CdSe QDs.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25029
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jin H.,Zhang L. G.,Zheng Z. H.,et al. Temperature-dependent photoluminescence in coupling structures of CdSe quantum dots and a ZnCdSe quantum well[J]. Chinese Physics Letters,2005,22(6):1518-1521.
APA	Jin H..,Zhang L. G..,Zheng Z. H..,An L. N..,Lu Y. M..,...&Shen D. Z..(2005).Temperature-dependent photoluminescence in coupling structures of CdSe quantum dots and a ZnCdSe quantum well.Chinese Physics Letters,22(6),1518-1521.
MLA	Jin H.,et al."Temperature-dependent photoluminescence in coupling structures of CdSe quantum dots and a ZnCdSe quantum well".Chinese Physics Letters 22.6(2005):1518-1521.

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