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Structure and photoluminescence of nano-ZnO films grown on a Si (100) substrate by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn
其他题名论文其他题名
Lu L. X.; Tang Q. X.; Shao C. L.; Liu Y. C.
2005
发表期刊Chinese Physics Letters
ISSN0256-307X
卷号22期号:4页码:998-1001
摘要Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300 degrees C to 500 degrees C in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400 degrees C for 1 h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25001
专题中科院长春光机所知识产出
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GB/T 7714
Lu L. X.,Tang Q. X.,Shao C. L.,et al. Structure and photoluminescence of nano-ZnO films grown on a Si (100) substrate by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn[J]. Chinese Physics Letters,2005,22(4):998-1001.
APA Lu L. X.,Tang Q. X.,Shao C. L.,&Liu Y. C..(2005).Structure and photoluminescence of nano-ZnO films grown on a Si (100) substrate by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn.Chinese Physics Letters,22(4),998-1001.
MLA Lu L. X.,et al."Structure and photoluminescence of nano-ZnO films grown on a Si (100) substrate by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn".Chinese Physics Letters 22.4(2005):998-1001.
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