Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure

	Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure
其他题名	论文其他题名
	Zhao D. X.; Li B. H.; Wu C. X.; Lu Y. M.; Shen D. Z.; Zhang J. Y.; Fan X. W.
	2006
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	119 页码:304-308
摘要	MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported, which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24946
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao D. X.,Li B. H.,Wu C. X.,et al. Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure[J]. Journal of Luminescence,2006,119:304-308.
APA	Zhao D. X..,Li B. H..,Wu C. X..,Lu Y. M..,Shen D. Z..,...&Fan X. W..(2006).Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure.Journal of Luminescence,119,304-308.
MLA	Zhao D. X.,et al."Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure".Journal of Luminescence 119(2006):304-308.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Zhao-2006-Temperatur（130KB）			开放获取	--	浏览下载