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Temperature-enhanced ultraviolet emission in ZnO thin film
其他题名论文其他题名
Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W.
2006
发表期刊Journal of Luminescence
ISSN0022-2313
卷号119页码:242-247
摘要We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(100) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 degrees C for 2h, a novel UV emission peak I-x located at 3.22eV (385nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of I-x increases exponentially with increasing temperatures within the measuring temperature range, from 80 to 300K, but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers. (c) 2006 Published by Elsevier B.V.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/24926
专题中科院长春光机所知识产出
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Zhang Y. J.,Xu C. S.,Liu Y. C.,et al. Temperature-enhanced ultraviolet emission in ZnO thin film[J]. Journal of Luminescence,2006,119:242-247.
APA Zhang Y. J.,Xu C. S.,Liu Y. C.,Liu Y. X.,Wang G. R.,&Fan X. W..(2006).Temperature-enhanced ultraviolet emission in ZnO thin film.Journal of Luminescence,119,242-247.
MLA Zhang Y. J.,et al."Temperature-enhanced ultraviolet emission in ZnO thin film".Journal of Luminescence 119(2006):242-247.
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