Changchun Institute of Optics,Fine Mechanics and Physics,CAS
p-Type ZnO on sapphire by using O-2-N-2 co-activating and fabrication of ZnO LED | |
其他题名 | 论文其他题名 |
Zhang Z. Z.; Wei Z. P.; Lu Y. M.; Shen D. Z.; Yao B.; Li B. H.; Zhao D. X.; Zhang J. Y.; Fan X. W.; Tang Z. K. | |
2007 | |
发表期刊 | Journal of Crystal Growth |
ISSN | 0022-0248 |
卷号 | 301页码:362-365 |
摘要 | A co-activating route was employed to fabricate ZnO light-emitting diode (LED) by using molecular beam epitaxy. N-2 was used as the acceptor dopant source and O-2 was used as assistant gas for N-2 decomposing more than only oxygen source. Emission spectra of the N-2 + O-2 mixture plasma were monitored in situ in order to adjust growth parameters timely. Under the assistance of O-2, N atoms content in the plasma of the mixture shows a significant increase compared to the case without O-2 assistance. Electrical measurements of the as-grown p-type ZnO on sapphire show a carrier concentration of 1.2 x 18 cm(-3) and a mobility approaching 1 cm(2)V(-1)s(-1). A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. The turn-on voltage at 100 K is about 3.70 V, which approaches the bandgap of ZnO. Electroluminescence spectra show two bands: one is centered at 423 and the other centered at 523 nm, respectively. (c) 2006 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/24921 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang Z. Z.,Wei Z. P.,Lu Y. M.,et al. p-Type ZnO on sapphire by using O-2-N-2 co-activating and fabrication of ZnO LED[J]. Journal of Crystal Growth,2007,301:362-365. |
APA | Zhang Z. Z..,Wei Z. P..,Lu Y. M..,Shen D. Z..,Yao B..,...&Tang Z. K..(2007).p-Type ZnO on sapphire by using O-2-N-2 co-activating and fabrication of ZnO LED.Journal of Crystal Growth,301,362-365. |
MLA | Zhang Z. Z.,et al."p-Type ZnO on sapphire by using O-2-N-2 co-activating and fabrication of ZnO LED".Journal of Crystal Growth 301(2007):362-365. |
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