Diode end-pumped passively Q-switched Nd3+: GdVO4 self-Raman laser at 1176 nm

	Diode end-pumped passively Q-switched Nd3+: GdVO4 self-Raman laser at 1176 nm
其他题名	论文其他题名
	Wang B. S.; Peng J. Y.; Miao J. G.; Li Y. M.; Hao E. J.; Zhang Z.; Gao L. L.; Tan H. M.
	2007
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	24 期号:1 页码:112-114
摘要	A compact diode-end-pumped passively Q-switched Nd3+ :GdVO4+ : YAG self-Raman laser at 1176 nm is demonstrated. When the T-0 = 80% Cr4+ : YAG saturable abcorber is inserted into the cavity, the maximum Ramen laser output reaches 175 mW with 3.8 W incident pump power. The optical conversation from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the frst strokes laser are 4.5 mu J, 1.8 ns, and 38.5 kHz, respectively. Ther is a strong blus emission (about 350-400 nm) can be observed in the Nd3+ :GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd3+ ions.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24920
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang B. S.,Peng J. Y.,Miao J. G.,et al. Diode end-pumped passively Q-switched Nd3+: GdVO4 self-Raman laser at 1176 nm[J]. Chinese Physics Letters,2007,24(1):112-114.
APA	Wang B. S..,Peng J. Y..,Miao J. G..,Li Y. M..,Hao E. J..,...&Tan H. M..(2007).Diode end-pumped passively Q-switched Nd3+: GdVO4 self-Raman laser at 1176 nm.Chinese Physics Letters,24(1),112-114.
MLA	Wang B. S.,et al."Diode end-pumped passively Q-switched Nd3+: GdVO4 self-Raman laser at 1176 nm".Chinese Physics Letters 24.1(2007):112-114.

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