A high-speed photoconductive UV detector based on an Mg0.4Zn0.6O thin film

	A high-speed photoconductive UV detector based on an Mg0.4Zn0.6O thin film
其他题名	论文其他题名
	Jiang D. Y.; Zhang J. Y.; Liu K. W.; Zhao Y. M.; Cong C. X.; Lu Y. M.; Yao B.; Zhang Z. Z.; Shen D. Z.
	2007
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	22 期号:7 页码:687-690
摘要	A high quality MgxZn1-xO thin film with up to similar to 40 at% Mg incorporation was grown on a quartz substrate by the rf magnetron sputtering technique. The photoconductive type of Mg0.4Zn0.6O metal - semiconductor - metal ultraviolet detector was prepared. The ratio of the ultraviolet to visible was more than four orders of magnitude; the 10% - 90% rise and fall times were 16 ns and 250 ns, respectively. Furthermore, the dark current was below 40 nA under 3 V bias and the gain was observed which caused the high responsivity (similar to 1.3 A W-1) at 320 nm, and the corresponding detectivity D* was 1.37 x 10(11) cm Hz(1/2) W-1. A high-speed response was attributed to the high quality of the Mg0.4Zn0.6O thin film, which was found to dramatically enhance the UV detection properties of the device. The effect of the gain on the fall time and responsivity was analysed in the present work.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24919
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang D. Y.,Zhang J. Y.,Liu K. W.,et al. A high-speed photoconductive UV detector based on an Mg0.4Zn0.6O thin film[J]. Semiconductor Science and Technology,2007,22(7):687-690.
APA	Jiang D. Y..,Zhang J. Y..,Liu K. W..,Zhao Y. M..,Cong C. X..,...&Shen D. Z..(2007).A high-speed photoconductive UV detector based on an Mg0.4Zn0.6O thin film.Semiconductor Science and Technology,22(7),687-690.
MLA	Jiang D. Y.,et al."A high-speed photoconductive UV detector based on an Mg0.4Zn0.6O thin film".Semiconductor Science and Technology 22.7(2007):687-690.

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