Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition | |
其他题名 | 论文其他题名 |
Liu K. W.; Zhang J. Y.; Shen D. Z.; Shan C. X.; Li B. H.; Lu Y. M.; Fan X. W. | |
2007 | |
发表期刊 | Applied Physics Letters |
ISSN | 0003-6951 |
卷号 | 90期号:26 |
摘要 | FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tetragonal structure. The structure relationship between FeSe epilayer and GaAs (001) substrate has been studied. The critical behavior in the temperature-dependent resistivity at similar to 290 K is close to the Curie temperature, which confirmed that the transformation from ferromagnetism to paramagnetism could be responsible for the critical behavior. (c) 2007 American Institute of Physics. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/24904 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Liu K. W.,Zhang J. Y.,Shen D. Z.,et al. Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition[J]. Applied Physics Letters,2007,90(26). |
APA | Liu K. W..,Zhang J. Y..,Shen D. Z..,Shan C. X..,Li B. H..,...&Fan X. W..(2007).Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition.Applied Physics Letters,90(26). |
MLA | Liu K. W.,et al."Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition".Applied Physics Letters 90.26(2007). |
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