Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition

	Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition
其他题名	论文其他题名
	Liu K. W.; Zhang J. Y.; Shen D. Z.; Shan C. X.; Li B. H.; Lu Y. M.; Fan X. W.
	2007
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	90 期号:26
摘要	FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tetragonal structure. The structure relationship between FeSe epilayer and GaAs (001) substrate has been studied. The critical behavior in the temperature-dependent resistivity at similar to 290 K is close to the Curie temperature, which confirmed that the transformation from ferromagnetism to paramagnetism could be responsible for the critical behavior. (c) 2007 American Institute of Physics.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24904
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu K. W.,Zhang J. Y.,Shen D. Z.,et al. Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition[J]. Applied Physics Letters,2007,90(26).
APA	Liu K. W..,Zhang J. Y..,Shen D. Z..,Shan C. X..,Li B. H..,...&Fan X. W..(2007).Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition.Applied Physics Letters,90(26).
MLA	Liu K. W.,et al."Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition".Applied Physics Letters 90.26(2007).

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