Photoluminescence enhancement in Yb3+: Er3+ co-doped eutectic Al2O3 : SiO2 thin films by 980nm excitation

	Photoluminescence enhancement in Yb3+: Er3+ co-doped eutectic Al2O3 : SiO2 thin films by 980nm excitation
其他题名	论文其他题名
	Song Q.; Gao J. S.; Wang X. Y.; Chen H.; Wang T. T.; Zheng X. M.; Li C. R.; Song C. L.
	2007
发表期刊	Optics Express
ISSN	1094-4087
卷号	15 期号:7 页码:3948-3954
摘要	Si nanocrystals (nc-Si) are addressed in the eutectic Al2O3:SiO2 thin films co-doped with Er3+ and Yb3+ by the laser-induced crystallization (LIC). The thin films are originally synthesized on a silica-on-silicon ( SOS) substrate by the microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF sputtering. Raman spectroscopy has revealed that the strong crystallization occurs with the emergence of the nc-Si in the eutectic Al2O3: SiO2 layer during the liquid phase transformation. The dual wavelength energy transfer mechanism at 800 nm and 980 nm induced by 980 nm excitation in nc-Si and Yb sensitized Er doped system has been proposed and demonstrated. A tenfold photoluminescence enhancement has been obtained from this mechanism. (c) 2007 Optical Society of America.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24892
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Song Q.,Gao J. S.,Wang X. Y.,et al. Photoluminescence enhancement in Yb3+: Er3+ co-doped eutectic Al2O3 : SiO2 thin films by 980nm excitation[J]. Optics Express,2007,15(7):3948-3954.
APA	Song Q..,Gao J. S..,Wang X. Y..,Chen H..,Wang T. T..,...&Song C. L..(2007).Photoluminescence enhancement in Yb3+: Er3+ co-doped eutectic Al2O3 : SiO2 thin films by 980nm excitation.Optics Express,15(7),3948-3954.
MLA	Song Q.,et al."Photoluminescence enhancement in Yb3+: Er3+ co-doped eutectic Al2O3 : SiO2 thin films by 980nm excitation".Optics Express 15.7(2007):3948-3954.

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