Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation

	Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation
其他题名	论文其他题名
	Gai Y. Q.; Yao B.; Lu Y. M.; Shen D. Z.; Zhang J. Y.; Zhao D. X.; Fan X. W.
	2007
发表期刊	Physics Letters A
ISSN	0375-9601
卷号	372 期号:1 页码:72-76
摘要	The full regions of the electronic and optical properties of in-plane biaxial strained thin film ZnO are studied using pseudopotential plane-wave method. The fundamental band gap at the F point increase linearly with the increase of tensile strains, but decreased with the compressive ones. The strains affected the local tetrahedral symmetry, and so the splitting of crystal field energy. The band dispersion relation of the valence band maximum changes with the strains, which means the residual strains have effects on the effective hole mass, thus the transportation properties of the p-type ZnO. The changes tendency of optical properties up to full regions under strains have been shown and discussed. (c) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24886
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gai Y. Q.,Yao B.,Lu Y. M.,et al. Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation[J]. Physics Letters A,2007,372(1):72-76.
APA	Gai Y. Q..,Yao B..,Lu Y. M..,Shen D. Z..,Zhang J. Y..,...&Fan X. W..(2007).Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation.Physics Letters A,372(1),72-76.
MLA	Gai Y. Q.,et al."Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation".Physics Letters A 372.1(2007):72-76.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Gai-2007-Electronic （437KB）			开放获取	--	浏览下载