Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Improvement of sub-threshold current models for a-SM thin-film transistors | |
其他题名 | 论文其他题名 |
Wang L. J.; Zhu J.; Liu C. L.; Liu G. J.; Shao X. B.; Yan D. H. | |
2007 | |
发表期刊 | Solid-State Electronics
![]() |
ISSN | 0038-1101 |
卷号 | 51期号:5页码:703-707 |
摘要 | The improved sub-threshold drain-source current models of a-Si:H thin-film transistors (TFTs) is demonstrated in this paper. The current-voltage (I-P) characteristics of a-Si:H TFTs are revealed in both forward and reverse sub-threshold region. The I-Vcharacteristics exhibit a strong dependence on the gate-source voltage (VGs) and the drain-source voltage (VDs). The effects of weak electron distribution and a lateral component of the electric field on the a-Si:H TFT characteristics, which are induced by VDS at both front and back interface, are considered in current model. This strong dependence of the sub-threshold current on VDs is attributed to the channel length, drain-gate overlap vicinity, and process condition. Simulated results based on the model exhibit a good agreement with measured experimental data. The proposed model and the modeling process will be very useful for practical TFTs simulation. (c) 2007 Elsevier Ltd. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/24885 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Wang L. J.,Zhu J.,Liu C. L.,et al. Improvement of sub-threshold current models for a-SM thin-film transistors[J]. Solid-State Electronics,2007,51(5):703-707. |
APA | Wang L. J.,Zhu J.,Liu C. L.,Liu G. J.,Shao X. B.,&Yan D. H..(2007).Improvement of sub-threshold current models for a-SM thin-film transistors.Solid-State Electronics,51(5),703-707. |
MLA | Wang L. J.,et al."Improvement of sub-threshold current models for a-SM thin-film transistors".Solid-State Electronics 51.5(2007):703-707. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Wang-2007-Improvemen(246KB) | 开放获取 | -- | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论