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Zn0.8Mg0.2O-based metal-semiconductor-metal photodiodes on quartz for visible-blind ultraviolet detection
其他题名论文其他题名
Liu K. W.; Zhang J. Y.; Ma J. G.; Jiang D. Y.; Lu Y. M.; Yao B.; Li B. H.; Zhao D. X.; Zhang Z. Z.; Shen D. Z.
2007
发表期刊Journal of Physics D-Applied Physics
ISSN0022-3727
卷号40期号:9页码:2765-2768
摘要Zn0.8Mg0.2O metal-semiconductor-metal ultraviolet photodiodes were fabricated on quartz by radio frequency magnetron sputtering. Dark current, spectral responsivity and pulse response experiments were carried out for the device. The photodetectors showed a peak responsivity at 330 nm. The ultraviolet-visible rejection ratio ( R330 nm/R400 nm) was more than four orders of magnitude at 3 V bias. The photodetector showed fast photoresponse with a rise time of 10 ns and a fall time of 170 ns. In addition, the thermally limited detectivity was calculated to be 3.1 x 10(11) cm Hz(1/2) W-1 at 330 nm.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/24868
专题中科院长春光机所知识产出
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GB/T 7714
Liu K. W.,Zhang J. Y.,Ma J. G.,et al. Zn0.8Mg0.2O-based metal-semiconductor-metal photodiodes on quartz for visible-blind ultraviolet detection[J]. Journal of Physics D-Applied Physics,2007,40(9):2765-2768.
APA Liu K. W..,Zhang J. Y..,Ma J. G..,Jiang D. Y..,Lu Y. M..,...&Shen D. Z..(2007).Zn0.8Mg0.2O-based metal-semiconductor-metal photodiodes on quartz for visible-blind ultraviolet detection.Journal of Physics D-Applied Physics,40(9),2765-2768.
MLA Liu K. W.,et al."Zn0.8Mg0.2O-based metal-semiconductor-metal photodiodes on quartz for visible-blind ultraviolet detection".Journal of Physics D-Applied Physics 40.9(2007):2765-2768.
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