Properties of MgxZn1-xO thin films sputtered in different gases

	Properties of MgxZn1-xO thin films sputtered in different gases
其他题名	论文其他题名
	Jiang D. Y.; Zhang J. Y.; Liu K. W.; Shan C. X.; Zhao Y. M.; Yang T.; Yao B.; Lu Y. M.; Shen D. Z.
	2008
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	254 期号:7 页码:2146-2149
摘要	MgxZn1-xO alloy films were prepared on sapphire substrates using Ar and N-2 as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the MgxZn1-xO films was studied. By using N-2 as the sputtering gas, the MgxZn1-xO film shows p-type conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N-O or N-Zn, and the N-doping. (C) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24850
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang D. Y.,Zhang J. Y.,Liu K. W.,et al. Properties of MgxZn1-xO thin films sputtered in different gases[J]. Applied Surface Science,2008,254(7):2146-2149.
APA	Jiang D. Y..,Zhang J. Y..,Liu K. W..,Shan C. X..,Zhao Y. M..,...&Shen D. Z..(2008).Properties of MgxZn1-xO thin films sputtered in different gases.Applied Surface Science,254(7),2146-2149.
MLA	Jiang D. Y.,et al."Properties of MgxZn1-xO thin films sputtered in different gases".Applied Surface Science 254.7(2008):2146-2149.

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