Changchun Institute of Optics,Fine Mechanics and Physics,CAS
A green-yellow emitting beta-Sr2SiO4 : Eu2+ phosphor for near ultraviolet chip white-light-emitting diode | |
其他题名 | 论文其他题名 |
Sun X. Y.; Zhang J. H.; Zhang X.; Luo Y. S.; Wang X. J. | |
2008 | |
发表期刊 | Journal of Rare Earths
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ISSN | 1002-0721 |
卷号 | 26期号:3页码:421-424 |
摘要 | Sr2SiO4:xEu(2+) phosphors were synthesized through the solid-state reaction technique. The crystal phase of Sr2SiO4:xEu(2+) phosphor manipulated by Eu2+ concentration was studied. The phase transited from beta to alpha' in Sr2SiO4:xEu(2+) phosphor with increasing europium concentration. The single beta phase was formed as x <= 0.005 and changed alpha' phase when x>0.01. The emission spectrum of the beta-Sr2SiO4:Eu2+ phosphor consisted of a green-yellow broadband peaking at around 540 nm and a blue band at 470 nm under near ultraviolet excitation. The white LEDs by combining near ultraviolet chips with beta-Sr2SiO4:Eu2+ phosphors were fabricated. The luminous efficiency (15.7 1m/W) was higher than alpha'-Sr2SiO4:Eu2+ phosphor white LED. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/24846 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Sun X. Y.,Zhang J. H.,Zhang X.,et al. A green-yellow emitting beta-Sr2SiO4 : Eu2+ phosphor for near ultraviolet chip white-light-emitting diode[J]. Journal of Rare Earths,2008,26(3):421-424. |
APA | Sun X. Y.,Zhang J. H.,Zhang X.,Luo Y. S.,&Wang X. J..(2008).A green-yellow emitting beta-Sr2SiO4 : Eu2+ phosphor for near ultraviolet chip white-light-emitting diode.Journal of Rare Earths,26(3),421-424. |
MLA | Sun X. Y.,et al."A green-yellow emitting beta-Sr2SiO4 : Eu2+ phosphor for near ultraviolet chip white-light-emitting diode".Journal of Rare Earths 26.3(2008):421-424. |
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